Infineon Technologies IGP30N65F5XKSA1

SKU: IGP30N65F5XKSA1-9

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Manufacturer Part :
IGP30N65F5XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IGP30N65F5XKSA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 15A, 23 Ω, 15V

Max Power Dissipation

188W

Factory Lead Time

16 Weeks

Published

2013

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Max Collector Current

55A

JEDEC-95 Code

TO-220AB

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

188W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSFM-T3

Turn On Time

28 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 30A

Turn Off Time-Nom (toff)

206 ns

IGBT Type

Trench

Gate Charge

65nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

19ns/170ns

Switching Energy

280μJ (on), 70μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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