Infineon Technologies IGW30N100TFKSA1

SKU: IGW30N100TFKSA1-9

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Manufacturer Part :
IGW30N100TFKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IGW30N100TFKSA1 Datasheet :
IGW30N100TFKSA1

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

600V, 30A, 16 Ω, 15V

Max Power Dissipation

412W

Factory Lead Time

14 Weeks

Published

2008

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1000V

Qualification Status

Not Qualified

Element Configuration

Single

Input Type

Standard

Power - Max

412W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.9V

Max Collector Current

60A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Turn On Time

54 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Turn Off Time-Nom (toff)

569 ns

IGBT Type

Trench Field Stop

Gate Charge

217nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

33ns/535ns

Switching Energy

3.8mJ

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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