Infineon Technologies IGZ50N65H5XKSA1

SKU: IGZ50N65H5XKSA1-9

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Manufacturer Part :
IGZ50N65H5XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-4
RoHS :
ROHS3 Compliant
IGZ50N65H5XKSA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 25A, 12 Ω, 15V

Max Power Dissipation

273W

Factory Lead Time

14 Weeks

Published

2008

Series

TrenchStop™ 5

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~175°C TJ

Terminal Position

SINGLE

Max Collector Current

85A

Turn On Time

27 ns

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

273W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

311 ns

IGBT Type

Trench

Gate Charge

109nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/250ns

Switching Energy

410μJ (on), 190μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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