Infineon Technologies IHD10N60RA

SKU: IHD10N60RA-9

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Manufacturer Part :
IHD10N60RA
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IHD10N60RA Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Series

TrenchStop®

Surface Mount

YES

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 10A, 23 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

Terminal Finish

MATTE TIN

Max Power Dissipation

110W

Terminal Position

SINGLE

Terminal Form

GULL WING

Published

2012

Time@Peak Reflow Temperature-Max (s)

40

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

20A

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

110W

Transistor Application

POWER CONTROL

Halogen Free

Not Halogen Free

Polarity/Channel Type

N-CHANNEL

Pin Count

3

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 10A

Turn Off Time-Nom (toff)

355 ns

IGBT Type

Trench

Gate Charge

62nC

Current - Collector Pulsed (Icm)

30A

Td (on/off) @ 25°C

-/170ns

Switching Energy

270μJ

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.7V

RoHS Status

RoHS Compliant

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