Infineon Technologies IHW25N120E1XKSA1

SKU: IHW25N120E1XKSA1-9

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Manufacturer Part :
IHW25N120E1XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IHW25N120E1XKSA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2016

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Terminal Finish

Tin (Sn)

Factory Lead Time

16 Weeks

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

ECCN Code

EAR99

Packaging

Tube

Max Power Dissipation

231W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

50A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSFM-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Input Type

Standard

Power - Max

231W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 25A

Turn Off Time-Nom (toff)

1677 ns

IGBT Type

NPT and Trench

Gate Charge

147nC

Current - Collector Pulsed (Icm)

75A

Switching Energy

800μJ (off)

RoHS Status

ROHS3 Compliant

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