Infineon Technologies IHW30N65R6XKSA1

SKU: IHW30N65R6XKSA1-9

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Manufacturer Part :
IHW30N65R6XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
IHW30N65R6XKSA1 Datasheet :
IHW30N65R6XKSA1

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Description

Specification

Processor

Manufacturer

Infineon

Product Status

Active

Supplier Device Package

PG-TO247-3

Base Product Number

IHW30

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

65 A

Factory Pack QuantityFactory Pack Quantity

240

Maximum Gate Emitter Voltage

±30V

Maximum Operating Temperature

+ 175 C

Maximum Collector Emitter Voltage

650 V

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

PG-TO247-3

Part # Aliases

IHW30N65R6 SP005399486

Pd - Power Dissipation

163 W

Package / Case

TO-247-3

Mounting Type

Through Hole

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

single

Power Dissipation

163W

Input Type

Standard

Power - Max

163 W

Operating Temperature

-40°C ~ 175°C (TJ)

Test Conditions

400V, 30A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 30A

Continuous Collector Current

65A

Gate Charge

120 nC

Current - Collector Pulsed (Icm)

90 A

Td (on/off) @ 25°C

13ns/161ns

Switching Energy

730μJ (on), 260μJ (off)

Reverse Recovery Time (trr)

90 ns

Packaging

Tube

Product Category

IGBT Transistors

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