Infineon Technologies IKD06N60RAATMA1

SKU: IKD06N60RAATMA1-9

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Manufacturer Part :
IKD06N60RAATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IKD06N60RAATMA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 6A, 23 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tape & Reel (TR)

Series

TrenchStop™

Pbfree Code

yes

Published

2012

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

100W

Terminal Position

SINGLE

Terminal Form

GULL WING

Mount

Surface Mount

Factory Lead Time

14 Weeks

Reverse Recovery Time

68 ns

Max Breakdown Voltage

600V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

100W

Transistor Application

GENERAL PURPOSE

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

12A

Reference Standard

AEC-Q101

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Turn On Time

22 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6A

Turn Off Time-Nom (toff)

335 ns

IGBT Type

Trench Field Stop

Gate Charge

48nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

12ns/127ns

Switching Energy

110μJ (on), 220μJ (off)

JESD-30 Code

R-PSSO-G2

RoHS Status

ROHS3 Compliant

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