Infineon Technologies IKFW50N65EH5XKSA1

SKU: IKFW50N65EH5XKSA1-9

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Manufacturer Part :
IKFW50N65EH5XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
IKFW50N65EH5XKSA1 Datasheet :
IKFW50N65EH5XKSA1

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Description

Specification

Processor

Manufacturer

Infineon

Tradename

TRENCHSTOP

Supplier Device Package

PG-HSIP247-3-2

Base Product Number

IKFW50

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

59 A

Factory Pack QuantityFactory Pack Quantity

240

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKFW50N65EH5 SP001728804

Pd - Power Dissipation

275 W

Product Status

Active

Test Conditions

400V, 40A, 15.1Ohm, 15V

Package / Case

TO-247-3

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

124W

Input Type

Standard

Power - Max

124 W

Product Type

IGBT Transistors

Packaging

Tube

Operating Temperature

-40°C ~ 175°C (TJ)

Continuous Collector Current

59A

IGBT Type

Trench Field Stop

Gate Charge

95 nC

Current - Collector Pulsed (Icm)

160 A

Td (on/off) @ 25°C

20ns/138ns

Switching Energy

1.2mJ (on), 400μJ (off)

Reverse Recovery Time (trr)

52 ns

Series

Trenchstop? 5

Product Category

IGBT Transistors

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