Infineon Technologies IKN01N60RC2ATMA1

SKU: IKN01N60RC2ATMA1-9

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Manufacturer Part :
IKN01N60RC2ATMA1
Manufacturer :
Infineon Technologies
Package :
TO-261-4, TO-261AA
RoHS :
IKN01N60RC2ATMA1 Datasheet :
IKN01N60RC2ATMA1

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Description

Specification

Processor

Manufacturer

Infineon

Maximum Gate Emitter Voltage

20V

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-3

Base Product Number

IKN01N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

600 V

Current-Collector (Ic) (Max)

2.2 A

Factory Pack QuantityFactory Pack Quantity

3000

Pd - Power Dissipation

5.1 W

Mounting Type

Surface Mount

Maximum Operating Temperature

+ 150 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

SMD/SMT

MSL

MSL 1 – Unlimited

Package Type

PG-SOT223-3

Part # Aliases

IKN01N60RC2 SP005547444

Maximum Collector Emitter Voltage

600 V

Product Status

Active

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

600 V

Packaging

MouseReel

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

5.1W

Input Type

Standard

Power - Max

5.1 W

Test Conditions

400V, 1A, 49Ohm, 15V

Operating Temperature

-40°C ~ 150°C (TJ)

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 1A

Continuous Collector Current

2.2A

Gate Charge

9 nC

Current - Collector Pulsed (Icm)

3 A

Td (on/off) @ 25°C

5.6ns/80ns

Switching Energy

25.1μJ (on), 13.5μJ (off)

Reverse Recovery Time (trr)

59.5 ns

Product Category

IGBT Transistors

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