Infineon Technologies IKW08N120CS7XKSA1

SKU: IKW08N120CS7XKSA1-9

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Manufacturer Part :
IKW08N120CS7XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
IKW08N120CS7XKSA1 Datasheet :
IKW08N120CS7XKSA1

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Description

Specification

Processor

Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Supplier Device Package

PG-TO247-3

Base Product Number

IKW08N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

1.2 kV

Current-Collector (Ic) (Max)

21 A

Factory Pack QuantityFactory Pack Quantity

240

Maximum Collector Emitter Voltage

1200 V

Test Conditions

600V, 8A, 20Ohm, 15V

Maximum Gate Emitter Voltage

±20V

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247-3

Part # Aliases

IKW08N120CS7 SP005419704

Pd - Power Dissipation

106 W

Product Status

Active

Package / Case

TO-247-3

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200 V

Packaging

Tube

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

106

Input Type

Standard

Power - Max

106 W

Product Type

IGBT Transistors

Channel Type

N

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 8A

Operating Temperature

-40°C ~ 175°C (TJ)

Continuous Collector Current

21

IGBT Type

Trench Field Stop

Gate Charge

52 nC

Current - Collector Pulsed (Icm)

24 A

Td (on/off) @ 25°C

17ns/160ns

Switching Energy

370μJ (on), 400μJ (off)

Reverse Recovery Time (trr)

130 ns

Subcategory

IGBTs

Product Category

IGBT Transistors

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