Infineon Technologies IKWH20N65WR6XKSA1

SKU: IKWH20N65WR6XKSA1-9

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Manufacturer Part :
IKWH20N65WR6XKSA1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
IKWH20N65WR6XKSA1 Datasheet :
IKWH20N65WR6XKSA1

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Description

Specification

Processor

Manufacturer

Infineon

Pd - Power Dissipation

136 W

Supplier Device Package

PG-TO247-3-32

Base Product Number

IKWH20N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

20 A

Current-Collector (Ic) (Max)

55 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Factory Pack QuantityFactory Pack Quantity

240

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247-3-HCC

Part # Aliases

IKWH20N65WR6 SP005545963

Package / Case

TO-247-3

Mounting Type

Through Hole

Power - Max

136 W

Product Type

IGBT Transistors

Series

Trenchstop? 5

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

140W

Input Type

Standard

Operating Temperature

-40°C ~ 175°C (TJ)

Product Status

Active

Voltage - Collector Emitter Breakdown (Max)

650 V

Channel Type

N

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 20A

Continuous Collector Current

40A

IGBT Type

Trench Field Stop

Gate Charge

97 nC

Current - Collector Pulsed (Icm)

60 A

Packaging

Tube

Product Category

IGBT Transistors

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