Infineon Technologies IKWH50N65WR6XKSA1

SKU: IKWH50N65WR6XKSA1-9

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Manufacturer Part :
IKWH50N65WR6XKSA1
Manufacturer :
Infineon Technologies
Package :
TO247-3-32
RoHS :
IKWH50N65WR6XKSA1 Datasheet :
IKWH50N65WR6XKSA1

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Description

Specification

Processor

Manufacturer

650 V

Package

TO-247-3-HCC

Package / Case

TO247-3-32

Base Product Number

Infineon Technologies

Brand

650 V

Collector- Emitter Voltage VCEO Max

20 A

Current-Collector (Ic) (Max)

240

Factory Pack QuantityFactory Pack Quantity

Infineon

Maximum Collector Emitter Voltage

±20V

Maximum Gate Emitter Voltage

+ 175 C

Maximum Operating Temperature

Infineon Technologies

Mfr

– 40 C

Minimum Operating Temperature

Through Hole

MSL

Tube

Mounting Type

Through Hole

Part # Aliases

205 W

Package Type

IKWH50N65WR6 SP005542787

Pd - Power Dissipation

Active

Product Status

Details

Operating Temperature

Tube

Packaging

*

Series

IGBTs

Subcategory

Si

Technology

3

Pin Count

Single

Configuration

205W

Power - Max

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

N

Vce(on) (Max) @ Vge, Ic

85A

Reverse Recovery Time (trr)

IGBT Transistors

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