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Manufacturer |
Infineon Technologies |
---|---|
Published |
2011 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
32W Tc |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
12 Weeks |
Series |
CoolMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance (Ciss) (Max) @ Vds |
1020pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
350m Ω @ 5.6A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 370μA |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±20V |
JEDEC-95 Code |
TO-220AB |
Drain Current-Max (Abs) (ID) |
10A |
Drain-source On Resistance-Max |
0.35Ohm |
Pulsed Drain Current-Max (IDM) |
22A |
DS Breakdown Voltage-Min |
500V |
Avalanche Energy Rating (Eas) |
246 mJ |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Element Configuration |
Single |
Factory Lead Time |
10 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
4 |
Number of Elements |
1 |
Voltage |
600V |
Power Dissipation-Max |
1.8W Ta |
Pbfree Code |
yes |
Current |
12A |
Fall Time (Typ) |
182 ns |
Turn-Off Delay Time |
28 ns |
Turn On Delay Time |
5.4 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 94μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
Rise Time |
5.6ns |
Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
Vgs (Max) |
±20V |
Power Dissipation |
1.8W |
Case Connection |
DRAIN |
Continuous Drain Current (ID) |
120mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
600V |
Drain to Source Breakdown Voltage |
600V |
Recovery Time |
130 ns |
FET Feature |
Depletion Mode |
Height |
1.5mm |
Length |
6.5mm |
Width |
3.5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
PG-SOT223-4 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
1999 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
1.8W |
Factory Lead Time |
10 Weeks |
Number of Terminations |
4 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.8W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
Vgs(th) (Max) @ Id |
2V @ 160μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
Rise Time |
9ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
1.17A |
Turn On Delay Time |
24 ns |
FET Type |
P-Channel |
Max Dual Supply Voltage |
-60V |
Drain-source On Resistance-Max |
0.8Ohm |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Recovery Time |
46 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.5 V |
Height |
1.8mm |
Length |
6.5mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Part Status |
Active |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Pin Count |
3 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Voltage |
240V |
Power Dissipation-Max |
360mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Threshold Voltage |
1.4V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 56μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
Rise Time |
3.1ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
13.7 ns |
Continuous Drain Current (ID) |
100mA |
Turn On Delay Time |
3.3 ns |
Power Dissipation |
360mW |
Max Dual Supply Voltage |
240V |
Drain to Source Breakdown Voltage |
240V |
Dual Supply Voltage |
240V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
1.4 V |
Feedback Cap-Max (Crss) |
4.2 pF |
Height |
1.1mm |
Width |
3.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Termination |
Through Hole |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
1998 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Case Connection |
DRAIN |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
60mOhm |
Voltage - Rated DC |
-100V |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
-40A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Lead Pitch |
2.54mm |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
200W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
200W |
Contact Plating |
Tin |
Factory Lead Time |
12 Weeks |
Threshold Voltage |
-4V |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
60m Ω @ 24A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
40A Tc |
Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
Rise Time |
86ns |
Drain to Source Voltage (Vdss) |
100V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
81 ns |
Turn-Off Delay Time |
79 ns |
Continuous Drain Current (ID) |
-40A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Turn On Delay Time |
17 ns |
Drain to Source Breakdown Voltage |
-100V |
Dual Supply Voltage |
-100V |
Avalanche Energy Rating (Eas) |
780 mJ |
Recovery Time |
260 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
-4 V |
Height |
19.8mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
SWITCHING |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
DRAIN |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
1997 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Number of Terminations |
3 |
Termination |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Resistance |
100mOhm |
Voltage - Rated DC |
-55V |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
-19A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Lead Pitch |
2.54mm |
Number of Elements |
1 |
Power Dissipation-Max |
68W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
56W |
Contact Plating |
Tin |
Factory Lead Time |
12 Weeks |
Threshold Voltage |
-4V |
JEDEC-95 Code |
TO-220AB |
Rds On (Max) @ Id, Vgs |
100m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
19A Tc |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
Rise Time |
55ns |
Drain to Source Voltage (Vdss) |
55V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
41 ns |
Turn-Off Delay Time |
30 ns |
Continuous Drain Current (ID) |
-19A |
FET Type |
P-Channel |
Turn On Delay Time |
13 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-55V |
Pulsed Drain Current-Max (IDM) |
68A |
Dual Supply Voltage |
-55V |
Recovery Time |
82 ns |
Nominal Vgs |
-4 V |
Height |
8.77mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
SWITCHING |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Turn On Delay Time |
6.4 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
600MOhm |
Termination |
SMD/SMT |
Voltage - Rated DC |
200V |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
5A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
43W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
43W |
Case Connection |
DRAIN |
Contact Plating |
Tin |
Factory Lead Time |
12 Weeks |
Drain Current-Max (Abs) (ID) |
5A |
Drain to Source Breakdown Voltage |
200V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
5A Tc |
Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
Rise Time |
11ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
12 ns |
Turn-Off Delay Time |
20 ns |
Continuous Drain Current (ID) |
5A |
Threshold Voltage |
4V |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Transistor Application |
SWITCHING |
FET Type |
N-Channel |
Pulsed Drain Current-Max (IDM) |
20A |
Dual Supply Voltage |
200V |
Avalanche Energy Rating (Eas) |
46 mJ |
Recovery Time |
140 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Switching Current |
5A |
Height |
2.52mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2007 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Part Status |
Active |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
7.5Ohm |
Voltage - Rated DC |
60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
115mA |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
225mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Continuous Drain Current (ID) |
115mA |
Power Dissipation |
225mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
115mA Tc |
Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
40 ns |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
20V |
Operating Mode |
ENHANCEMENT MODE |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2.5 V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
1.11mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Series |
PowerTrench® |
Operating Mode |
ENHANCEMENT MODE |
Factory Lead Time |
18 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
21.8MOhm |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Base Part Number |
FDS6675 |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Element Configuration |
Single |
JESD-609 Code |
e4 |
Power Dissipation |
2.5W |
Turn-Off Delay Time |
120 ns |
Continuous Drain Current (ID) |
11A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
13m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2470pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
11A Ta |
Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
Rise Time |
7.8ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
60 ns |
Turn On Delay Time |
3 ns |
FET Type |
P-Channel |
Threshold Voltage |
-2V |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
-30V |
Nominal Vgs |
-2 V |
Feedback Cap-Max (Crss) |
500 pF |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
Series |
PowerTrench® |
JESD-609 Code |
e4 |
Element Configuration |
Single |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
4.6MOhm |
Voltage - Rated DC |
-30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-20A |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
2.5W Ta |
Contact Plating |
Tin |
Factory Lead Time |
18 Weeks |
Turn-Off Delay Time |
660 ns |
Power Dissipation |
2.5W |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
7540pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
20A Ta |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Rise Time |
9ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
380 ns |
Continuous Drain Current (ID) |
-20A |
Threshold Voltage |
-1.8V |
Operating Mode |
ENHANCEMENT MODE |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
30V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
1.8 V |
Height |
1.75mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
360mW |
Part Status |
Active |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
5Ohm |
Voltage - Rated DC |
-60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-180mA |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
360mW Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
Continuous Drain Current (ID) |
180mA |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
79pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
180mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
2.5nC @ 10V |
Rise Time |
6.3ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
6.3 ns |
Turn-Off Delay Time |
20 ns |
Threshold Voltage |
-1.7V |
Gate to Source Voltage (Vgs) |
20V |
Turn On Delay Time |
5 ns |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.7 V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
1.2mm |
Length |
2.92mm |
Width |
3.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
SWITCHING |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
Series |
PowerTrench® |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Voltage - Rated DC |
-60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-3.3A |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Element Configuration |
Single |
Contact Plating |
Tin |
Factory Lead Time |
11 Weeks |
Continuous Drain Current (ID) |
-3A |
Threshold Voltage |
-1.6V |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
150m Ω @ 3A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
732pF @ 30V |
Current - Continuous Drain (Id) @ 25°C |
3A Ta |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Rise Time |
11ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10 ns |
Turn-Off Delay Time |
10 ns |
Turn On Delay Time |
8 ns |
Power Dissipation |
2.5W |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
3A |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
60V |
Nominal Vgs |
-1.6 V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
P-Channel |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
SC-75, SOT-416 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Factory Lead Time |
5 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
127mOhm |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
915mA |
Pin Count |
3 |
Number of Elements |
1 |
Power Dissipation-Max |
300mW Tj |
Part Status |
Active |
Operating Mode |
ENHANCEMENT MODE |
Fall Time (Typ) |
4.4 ns |
Turn-Off Delay Time |
25 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
230m Ω @ 600mA, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 16V |
Current - Continuous Drain (Id) @ 25°C |
915mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
1.82nC @ 4.5V |
Rise Time |
4.4ns |
Drive Voltage (Max Rds On,Min Rds On) |
1.5V 4.5V |
Vgs (Max) |
±6V |
Power Dissipation |
300mW |
Turn On Delay Time |
3.7 ns |
Continuous Drain Current (ID) |
915mA |
Threshold Voltage |
760mV |
Gate to Source Voltage (Vgs) |
6V |
Drain to Source Breakdown Voltage |
20V |
Nominal Vgs |
760 mV |
Height |
800μm |
Length |
800μm |
Width |
1.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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