Infineon Technologies IPD60R520C6ATMA1

SKU: IPD60R520C6ATMA1-11

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Manufacturer Part :
IPD60R520C6ATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IPD60R520C6ATMA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8.1A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

66W Tc

Terminal Position

SINGLE

Factory Lead Time

12 Weeks

Published

2008

Series

CoolMOS™ C6

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Tin (Sn)

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Input Capacitance (Ciss) (Max) @ Vds

512pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

23.4nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

520m Ω @ 2.8A, 10V

Vgs(th) (Max) @ Id

3.5V @ 230μA

Reach Compliance Code

not_compliant

JESD-30 Code

R-PSSO-G2

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

8.1A

Drain-source On Resistance-Max

0.52Ohm

Pulsed Drain Current-Max (IDM)

22A

DS Breakdown Voltage-Min

600V

Avalanche Energy Rating (Eas)

153 mJ

RoHS Status

RoHS Compliant

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