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Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
86A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
65W Tc |
Turn Off Delay Time |
7 ns |
Terminal Form |
GULL WING |
Factory Lead Time |
16 Weeks |
Published |
2010 |
Series |
Automotive, AEC-Q101, OptiMOS™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Operating Temperature |
-55°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Input Capacitance (Ciss) (Max) @ Vds |
2960pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5.2m Ω @ 86A, 10V |
Vgs(th) (Max) @ Id |
4V @ 30μA |
Halogen Free |
Halogen Free |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Rise Time |
11ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10 ns |
Continuous Drain Current (ID) |
86A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
40V |
Drain-source On Resistance-Max |
0.0052Ohm |
Avalanche Energy Rating (Eas) |
77 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-523 |
Number of Pins |
3 |
Supplier Device Package |
SOT-523 |
Weight |
2.012816mg |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
FET Type |
N-Channel |
Factory Lead Time |
14 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
400MOhm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
280mW Ta |
Element Configuration |
Single |
Power Dissipation |
280mW |
Turn On Delay Time |
5.1 ns |
Published |
2012 |
Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
6V |
Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
Rise Time |
7.4ns |
Drain to Source Voltage (Vdss) |
20V |
Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
Vgs (Max) |
±6V |
Fall Time (Typ) |
12.3 ns |
Turn-Off Delay Time |
26.7 ns |
Continuous Drain Current (ID) |
630mA |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
Drain to Source Breakdown Voltage |
20V |
Input Capacitance |
60.67pF |
Drain to Source Resistance |
300mOhm |
Rds On Max |
400 mΩ |
Height |
800μm |
Length |
1.7mm |
Width |
850μm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Element Configuration |
Single |
Factory Lead Time |
10 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
4 |
Number of Elements |
1 |
Voltage |
600V |
Power Dissipation-Max |
1.8W Ta |
Pbfree Code |
yes |
Current |
12A |
Fall Time (Typ) |
182 ns |
Turn-Off Delay Time |
28 ns |
Turn On Delay Time |
5.4 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 94μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
Rise Time |
5.6ns |
Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
Vgs (Max) |
±20V |
Power Dissipation |
1.8W |
Case Connection |
DRAIN |
Continuous Drain Current (ID) |
120mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
600V |
Drain to Source Breakdown Voltage |
600V |
Recovery Time |
130 ns |
FET Feature |
Depletion Mode |
Height |
1.5mm |
Length |
6.5mm |
Width |
3.5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
PG-SOT223-4 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
1999 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
1.8W |
Factory Lead Time |
10 Weeks |
Number of Terminations |
4 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.8W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
Vgs(th) (Max) @ Id |
2V @ 160μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
Rise Time |
9ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
1.17A |
Turn On Delay Time |
24 ns |
FET Type |
P-Channel |
Max Dual Supply Voltage |
-60V |
Drain-source On Resistance-Max |
0.8Ohm |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Recovery Time |
46 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.5 V |
Height |
1.8mm |
Length |
6.5mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation-Max |
500mW Ta |
Factory Lead Time |
10 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Part Status |
Active |
Element Configuration |
Single |
Fall Time (Typ) |
22 ns |
Turn-Off Delay Time |
7.4 ns |
Turn On Delay Time |
2.3 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6 Ω @ 190mA, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 13μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
20.9pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
190mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
0.9nC @ 10V |
Rise Time |
3.2ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
500mW |
Continuous Drain Current (ID) |
190mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
100V |
Drain-source On Resistance-Max |
6Ohm |
Drain to Source Breakdown Voltage |
100V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Length |
2.9mm |
Width |
1.3mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Part Status |
Active |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Pin Count |
3 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Voltage |
240V |
Power Dissipation-Max |
360mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Threshold Voltage |
1.4V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 56μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
Rise Time |
3.1ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
13.7 ns |
Continuous Drain Current (ID) |
100mA |
Turn On Delay Time |
3.3 ns |
Power Dissipation |
360mW |
Max Dual Supply Voltage |
240V |
Drain to Source Breakdown Voltage |
240V |
Dual Supply Voltage |
240V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
1.4 V |
Feedback Cap-Max (Crss) |
4.2 pF |
Height |
1.1mm |
Width |
3.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Number of Terminations |
3 |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
1998 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Resistance |
200mOhm |
Voltage - Rated DC |
-100V |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
-14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Lead Pitch |
2.54mm |
Number of Elements |
1 |
Power Dissipation-Max |
79W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
79W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Turn On Delay Time |
15 ns |
Threshold Voltage |
-4V |
JEDEC-95 Code |
TO-220AB |
Rds On (Max) @ Id, Vgs |
200m Ω @ 8.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
14A Tc |
Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
Rise Time |
58ns |
Drain to Source Voltage (Vdss) |
100V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
46 ns |
Turn-Off Delay Time |
45 ns |
Continuous Drain Current (ID) |
-14A |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-100V |
Pulsed Drain Current-Max (IDM) |
56A |
Dual Supply Voltage |
-100V |
Avalanche Energy Rating (Eas) |
250 mJ |
Recovery Time |
190 ns |
Nominal Vgs |
-4 V |
Height |
15.24mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Single |
Factory Lead Time |
12 Weeks |
Resistance |
40mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC |
55V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
3.8A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PDSO-G4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1W Ta |
Number of Terminations |
4 |
Operating Mode |
ENHANCEMENT MODE |
Continuous Drain Current (ID) |
3.8A |
Threshold Voltage |
2V |
Turn On Delay Time |
6.2 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
12ns |
Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
22 ns |
Turn-Off Delay Time |
35 ns |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Gate to Source Voltage (Vgs) |
16V |
Drain Current-Max (Abs) (ID) |
5.2A |
Drain to Source Breakdown Voltage |
55V |
Dual Supply Voltage |
55V |
Recovery Time |
88 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2 V |
Height |
1.8mm |
Length |
6.6802mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.31247g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
PowerTrench® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Number of Terminations |
2 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
9MOhm |
Voltage - Rated DC |
100V |
Terminal Form |
GULL WING |
Current Rating |
44A |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
310W Tc |
Element Configuration |
Single |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
Turn-Off Delay Time |
96 ns |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
9m Ω @ 80A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
12A Ta 80A Tc |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
Rise Time |
39ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
46 ns |
Continuous Drain Current (ID) |
80A |
Threshold Voltage |
4V |
Power Dissipation |
310W |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
100V |
Dual Supply Voltage |
100V |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Height |
5.08mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
30 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
36mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
PowerTrench® |
Power Dissipation |
1.6W |
Factory Lead Time |
13 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.6W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
JESD-609 Code |
e3 |
Turn On Delay Time |
7 ns |
Continuous Drain Current (ID) |
4.9mA |
Threshold Voltage |
-2.2V |
Rds On (Max) @ Id, Vgs |
42m Ω @ 4.9A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1005pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
4.9A Ta |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
4ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
4 ns |
Turn-Off Delay Time |
33 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
4.9A |
Drain-source On Resistance-Max |
0.042Ohm |
Drain to Source Breakdown Voltage |
-30V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Length |
3mm |
Width |
1.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
260.37mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
135W |
Mount |
Surface Mount |
Number of Terminations |
2 |
Terminal Finish |
Tin (Sn) |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
135W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Vgs (Max) |
±20V |
Fall Time (Typ) |
22 ns |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
16m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1874pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
9A Ta 50A Tc |
Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
Rise Time |
54ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
50A |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
9A |
Drain to Source Breakdown Voltage |
75V |
Avalanche Energy Rating (Eas) |
95 mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Series |
PowerTrench® |
Operating Mode |
ENHANCEMENT MODE |
Factory Lead Time |
18 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
21.8MOhm |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Base Part Number |
FDS6675 |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Element Configuration |
Single |
JESD-609 Code |
e4 |
Power Dissipation |
2.5W |
Turn-Off Delay Time |
120 ns |
Continuous Drain Current (ID) |
11A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
13m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2470pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
11A Ta |
Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
Rise Time |
7.8ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
60 ns |
Turn On Delay Time |
3 ns |
FET Type |
P-Channel |
Threshold Voltage |
-2V |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
-30V |
Nominal Vgs |
-2 V |
Feedback Cap-Max (Crss) |
500 pF |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
360mW |
Part Status |
Active |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
5Ohm |
Voltage - Rated DC |
-60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-180mA |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
360mW Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
Continuous Drain Current (ID) |
180mA |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
79pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
180mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
2.5nC @ 10V |
Rise Time |
6.3ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
6.3 ns |
Turn-Off Delay Time |
20 ns |
Threshold Voltage |
-1.7V |
Gate to Source Voltage (Vgs) |
20V |
Turn On Delay Time |
5 ns |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.7 V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
1.2mm |
Length |
2.92mm |
Width |
3.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
SWITCHING |
Lead Free |
Lead Free |
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