Infineon Technologies IPI50R399CPXKSA2

SKU: IPI50R399CPXKSA2-11

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Manufacturer Part :
IPI50R399CPXKSA2
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IPI50R399CPXKSA2 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

83W Tc

Turn Off Delay Time

80 ns

Packaging

Tube

Published

2008

Operating Temperature

-55°C~150°C TJ

Series

CoolMOS™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

8 Weeks

Vgs (Max)

±20V

Continuous Drain Current (ID)

9A

Case Connection

DRAIN

Turn On Delay Time

35 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

399m Ω @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 330μA

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Rise Time

14ns

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

500V

Drain Current-Max (Abs) (ID)

9A

Drain to Source Breakdown Voltage

560V

Pulsed Drain Current-Max (IDM)

20A

Avalanche Energy Rating (Eas)

215 mJ

Height

9.45mm

Length

10.2mm

Width

4.5mm

Power Dissipation

83W

RoHS Status

ROHS3 Compliant

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