Infineon Technologies IPS65R600E6AKMA1

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Description

Specification

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Manufacturer	Infineon Technologies
Terminal Position	SINGLE
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	7.3A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	63W Tc
Packaging	Tube
Published	2015
Operating Temperature	-55°C~150°C TJ
Series	CoolMOS™ E6
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Mount	Through Hole
Factory Lead Time	12 Weeks
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
JESD-30 Code	R-PSIP-T3
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210μA
Reach Compliance Code	not_compliant
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	7.3A
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	142 mJ
RoHS Status	ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Lead Free	Contains Lead

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Infineon Technologies BSS131H6327XTSA1 Real Image

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Infineon Technologies BSS131H6327XTSA1

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SKU: BSS131H6327XTSA1-11

Manufacturer	Infineon Technologies
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	SIPMOS®
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Part Status	Active
Termination	SMD/SMT
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Voltage	240V
Power Dissipation-Max	360mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Threshold Voltage	1.4V
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	14 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 56μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	77pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.1nC @ 10V
Rise Time	3.1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	13.7 ns
Continuous Drain Current (ID)	100mA
Turn On Delay Time	3.3 ns
Power Dissipation	360mW
Max Dual Supply Voltage	240V
Drain to Source Breakdown Voltage	240V
Dual Supply Voltage	240V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.4 V
Feedback Cap-Max (Crss)	4.2 pF
Height	1.1mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

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Infineon Technologies IRF5210PBF

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SKU: IRF5210PBF-11

Manufacturer	Infineon Technologies
Termination	Through Hole
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Number of Terminations	3
ECCN Code	EAR99
Resistance	60mOhm
Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
Current Rating	-40A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	86ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	-40A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	17 ns
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	780 mJ
Recovery Time	260 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	19.8mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

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Infineon Technologies IRF9530NPBF

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SKU: IRF9530NPBF-11

Manufacturer	Infineon Technologies
Number of Terminations	3
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Case Connection	DRAIN
Factory Lead Time	12 Weeks
Termination	Through Hole
ECCN Code	EAR99
Resistance	200mOhm
Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
Current Rating	-14A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Turn On Delay Time	15 ns
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Rds On (Max) @ Id, Vgs	200m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-14A
FET Type	P-Channel
Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	56A
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	250 mJ
Recovery Time	190 ns
Nominal Vgs	-4 V
Height	15.24mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies IRF9Z34NPBF

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In stock

SKU: IRF9Z34NPBF-11

Manufacturer	Infineon Technologies
Case Connection	DRAIN
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Number of Terminations	3
Termination	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	100mOhm
Voltage - Rated DC	-55V
Peak Reflow Temperature (Cel)	250
Current Rating	-19A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56W
Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	-19A
FET Type	P-Channel
Turn On Delay Time	13 ns
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	-55V
Recovery Time	82 ns
Nominal Vgs	-4 V
Height	8.77mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

Infineon Technologies IRFR024NTRPBF Real Image

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Infineon Technologies IRFR024NTRPBF

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In stock

SKU: IRFR024NTRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	75mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Current Rating	17A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Number of Terminations	2
Turn On Delay Time	4.9 ns
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	34ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	55V
Recovery Time	83 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

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Infineon Technologies IRFR220NTRPBF

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SKU: IRFR220NTRPBF-11

Manufacturer	Infineon Technologies
Turn On Delay Time	6.4 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	600MOhm
Termination	SMD/SMT
Voltage - Rated DC	200V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	43W
Case Connection	DRAIN
Contact Plating	Tin
Factory Lead Time	12 Weeks
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	200V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Transistor Application	SWITCHING
FET Type	N-Channel
Pulsed Drain Current-Max (IDM)	20A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	46 mJ
Recovery Time	140 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Switching Current	5A
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Rds On (Max) @ Id, Vgs	600m Ω @ 2.9A, 10V
Lead Free	Lead Free

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Nexperia USA Inc. 2N7002P,215

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SKU: 2N7002P,215-11

Manufacturer	Nexperia USA Inc.
Published	2005
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
HTS Code	8541.21.00.75
Factory Lead Time	4 Weeks
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Packaging	Tape & Reel (TR)
Terminal Position	DUAL
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	350mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Terminal Form	GULL WING
Pin Count	3
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	360mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.8nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant

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ON Semiconductor FDB33N25TM

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In stock

SKU: FDB33N25TM-11

Manufacturer	ON Semiconductor
Power Dissipation	235W
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	UniFET™
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	94MOhm
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	235W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	7 Weeks
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	33A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn On Delay Time	35 ns
Case Connection	DRAIN
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

ON Semiconductor FDD16AN08A0-F085 Real Image

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ON Semiconductor FDD16AN08A0-F085

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SKU: FDD16AN08A0-F085-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	135W
Mount	Surface Mount
Number of Terminations	2
Terminal Finish	Tin (Sn)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	135W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Case Connection	DRAIN
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1874pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	54ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Turn On Delay Time	8 ns
FET Type	N-Channel
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	75V
Avalanche Energy Rating (Eas)	95 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

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ON Semiconductor FDS6681Z

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In stock

SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

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ON Semiconductor FDS6690A

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In stock

SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Renesas Electronics America RJK5015DPK-00#T0

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