Infineon Technologies IRF3805SPBF

SKU: IRF3805SPBF-11

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Manufacturer Part :
IRF3805SPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IRF3805SPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

260

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

75A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

300W Tc

Operating Temperature

-55°C~175°C TJ

Published

2010

Series

HEXFET®

Packaging

Tube

JESD-609 Code

e3

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Surface Mount

YES

Mounting Type

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds

7960pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

290nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

3.3m Ω @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

JESD-30 Code

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s)

30

Drain to Source Voltage (Vdss)

55V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

75A

Drain-source On Resistance-Max

0.0033Ohm

Pulsed Drain Current-Max (IDM)

890A

DS Breakdown Voltage-Min

55V

Avalanche Energy Rating (Eas)

940 mJ

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

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