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| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SO |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~150°C TJ |
| FET Type |
N-Channel |
| Packaging |
Tube |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Resistance |
13.4MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Output Current |
2.5A |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
9.4 ns |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Dual Supply Voltage |
80V |
| Vgs(th) (Max) @ Id |
4.9V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
8.5ns |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.6 ns |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
4.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Input Capacitance |
1.62nF |
| Recovery Time |
65 ns |
| Rds On (Max) @ Id, Vgs |
13.4mOhm @ 10A, 10V |
| Drain to Source Resistance |
13.4mOhm |
| Rds On Max |
13.4 mΩ |
| Nominal Vgs |
4.9 V |
| Height |
1.4986mm |
| Length |
4.9784mm |
| Width |
3.9878mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1620pF @ 25V |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-523 |
| Weight |
2.012816mg |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| FET Type |
N-Channel |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
400MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
280mW Ta |
| Element Configuration |
Single |
| Power Dissipation |
280mW |
| Turn On Delay Time |
5.1 ns |
| Published |
2012 |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
6V |
| Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
| Rise Time |
7.4ns |
| Drain to Source Voltage (Vdss) |
20V |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Vgs (Max) |
±6V |
| Fall Time (Typ) |
12.3 ns |
| Turn-Off Delay Time |
26.7 ns |
| Continuous Drain Current (ID) |
630mA |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
60.67pF |
| Drain to Source Resistance |
300mOhm |
| Rds On Max |
400 mΩ |
| Height |
800μm |
| Length |
1.7mm |
| Width |
850μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
500mW Ta |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Part Status |
Active |
| Element Configuration |
Single |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
7.4 ns |
| Turn On Delay Time |
2.3 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 13μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
20.9pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
190mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.9nC @ 10V |
| Rise Time |
3.2ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500mW |
| Continuous Drain Current (ID) |
190mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Voltage |
240V |
| Power Dissipation-Max |
360mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 56μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
| Rise Time |
3.1ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
13.7 ns |
| Continuous Drain Current (ID) |
100mA |
| Turn On Delay Time |
3.3 ns |
| Power Dissipation |
360mW |
| Max Dual Supply Voltage |
240V |
| Drain to Source Breakdown Voltage |
240V |
| Dual Supply Voltage |
240V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1.4 V |
| Feedback Cap-Max (Crss) |
4.2 pF |
| Height |
1.1mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Terminations |
3 |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
200mOhm |
| Voltage - Rated DC |
-100V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
79W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
79W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
15 ns |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
14A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
58ns |
| Drain to Source Voltage (Vdss) |
100V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Turn-Off Delay Time |
45 ns |
| Continuous Drain Current (ID) |
-14A |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Dual Supply Voltage |
-100V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Recovery Time |
190 ns |
| Nominal Vgs |
-4 V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
100mOhm |
| Voltage - Rated DC |
-55V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-19A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
68W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
56W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
19A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
41 ns |
| Turn-Off Delay Time |
30 ns |
| Continuous Drain Current (ID) |
-19A |
| FET Type |
P-Channel |
| Turn On Delay Time |
13 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
-55V |
| Recovery Time |
82 ns |
| Nominal Vgs |
-4 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Resistance |
15MOhm |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Factory Lead Time |
12 Weeks |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
350W Tc |
| Element Configuration |
Single |
| Power Dissipation |
350W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
4.46nF |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
25 ns |
| Continuous Drain Current (ID) |
85A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
85A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
15 mΩ |
| Nominal Vgs |
5 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Nexperia USA Inc. |
|---|---|
| Published |
2005 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| HTS Code |
8541.21.00.75 |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
350mW Ta |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
360mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
60V |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
PowerTrench® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Current Rating |
44A |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
310W Tc |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Turn-Off Delay Time |
96 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
12A Ta 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
39ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Continuous Drain Current (ID) |
80A |
| Threshold Voltage |
4V |
| Power Dissipation |
310W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.08mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
30 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
I2PAK (TO-262) |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2002 |
| Series |
PowerTrench® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation-Max |
310W Tc |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
8A Ta 79A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Voltage - Rated DC |
-25V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-460mA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Voltage |
25V |
| Power Dissipation-Max |
350mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Turn-Off Delay Time |
55 ns |
| Continuous Drain Current (ID) |
460mA |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
63pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
460mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 4.5V |
| Rise Time |
8ns |
| Drive Voltage (Max Rds On,Min Rds On) |
2.7V 4.5V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
8 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Current |
46A |
| Threshold Voltage |
-860mV |
| Gate to Source Voltage (Vgs) |
-8V |
| Drain to Source Breakdown Voltage |
-25V |
| Dual Supply Voltage |
-25V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-860 mV |
| Height |
1.11mm |
| Length |
2.92mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
350mW |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation |
1.5W |
| Factory Lead Time |
4 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Pin Count |
3 |
| Number of Channels |
1 |
| Power Dissipation-Max |
900mW Ta |
| Element Configuration |
Single |
| Published |
2007 |
| Turn On Delay Time |
5 ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2 ns |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
182pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V |
| Rise Time |
7ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
155m Ω @ 1A, 10V |
| Turn-Off Delay Time |
13 ns |
| Continuous Drain Current (ID) |
2.2A |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Renesas Electronics America |
|---|---|
| Pin Count |
4 |
| Package / Case |
TO-3P-3, SC-65-3 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Power Dissipation-Max |
150W Ta |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 12.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
25A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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