Infineon Technologies IRFB4229PBF

SKU: IRFB4229PBF-11

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Manufacturer Part :
IRFB4229PBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRFB4229PBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Number of Terminations

3

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-40°C~175°C TJ

Packaging

Tube

Published

2007

Series

HEXFET®

Part Status

Active

Transistor Application

SWITCHING

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

Through Hole

ECCN Code

EAR99

Resistance

46MOhm

Number of Elements

1

Power Dissipation-Max

330W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

330mW

Case Connection

DRAIN

FET Type

N-Channel

Mount

Through Hole

Factory Lead Time

12 Weeks

JEDEC-95 Code

TO-220AB

Vgs(th) (Max) @ Id

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C

46A Tc

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Rise Time

31ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

21 ns

Turn-Off Delay Time

30 ns

Continuous Drain Current (ID)

46A

Threshold Voltage

5V

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

250V

Rds On (Max) @ Id, Vgs

46m Ω @ 26A, 10V

Dual Supply Voltage

250V

Recovery Time

290 ns

Nominal Vgs

5 V

Height

16.51mm

Length

10.6426mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds

4560pF @ 25V

Lead Free

Lead Free

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