Infineon Technologies IRFH5302TR2PBF

SKU: IRFH5302TR2PBF-11

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Manufacturer Part :
IRFH5302TR2PBF
Manufacturer :
Infineon Technologies
Package :
8-PowerVDFN
RoHS :
RoHS Compliant
IRFH5302TR2PBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2009

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Number of Pins

8

Supplier Device Package

PQFN (5×6) Single Die

Current - Continuous Drain (Id) @ 25℃

32A Ta 100A Tc

Number of Elements

1

Turn Off Delay Time

22 ns

Operating Temperature

-55°C~150°C TJ

FET Type

N-Channel

Mount

Surface Mount

Series

HEXFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

3.6W

Element Configuration

Single

Power Dissipation

100W

Turn On Delay Time

18 ns

Packaging

Cut Tape (CT)

Rds On (Max) @ Id, Vgs

2.1mOhm @ 50A, 10V

Input Capacitance

4.4nF

Recovery Time

29 ns

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Rise Time

51ns

Drain to Source Voltage (Vdss)

30V

Fall Time (Typ)

18 ns

Continuous Drain Current (ID)

100A

Threshold Voltage

1.8V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Vgs(th) (Max) @ Id

2.35V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 15V

Drain to Source Resistance

2.1mOhm

Rds On Max

2.1 mΩ

Nominal Vgs

1.8 V

Height

810μm

Length

5mm

Width

6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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