Infineon Technologies IRG4BC10KDPBF

SKU: IRG4BC10KDPBF-9

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Manufacturer Part :
IRG4BC10KDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRG4BC10KDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Turn Off Delay Time

100 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

38W

Factory Lead Time

16 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

38W

Current Rating

9A

Element Configuration

Single

Packaging

Tube

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

49ns/97ns

Transistor Application

MOTOR CONTROL

Rise Time

32ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.62V

Max Collector Current

9A

JEDEC-95 Code

TO-220AB

Turn On Time

78 ns

Vce(on) (Max) @ Vge, Ic

2.62V @ 15V, 5A

Turn Off Time-Nom (toff)

410 ns

Gate Charge

19nC

Input Type

Standard

Turn On Delay Time

46 ns

Switching Energy

250μJ (on), 140μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

210ns

Height

8.77mm

Length

10.5156mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

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