Infineon Technologies IRG4BC10SD-S

SKU: IRG4BC10SD-S-9

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Manufacturer Part :
IRG4BC10SD-S
Manufacturer :
Infineon Technologies
Package :
RoHS :
Non-RoHS Compliant
IRG4BC10SD-S Datasheet :
IRG4BC10SD-S

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e0

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

14A

Number of Elements

1

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

225

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

TIN LEAD

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Surface Mount

YES

Mounting Type

Surface Mount

Reverse Recovery Time

28ns

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

38W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

106 ns

Time@Peak Reflow Temperature-Max (s)

30

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Qualification Status

Not Qualified

RoHS Status

Non-RoHS Compliant

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