Infineon Technologies IRG4BC10SD-SPBF

SKU: IRG4BC10SD-SPBF-9

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Manufacturer Part :
IRG4BC10SD-SPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRG4BC10SD-SPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

13 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

38W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

14A

Published

2000

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Turn Off Time-Nom (toff)

1780 ns

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

36ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Turn On Time

106 ns

Element Configuration

Single

Power Dissipation

38W

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Height

4.699mm

Length

10.668mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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