Infineon Technologies IRG4BC15UD-LPBF

SKU: IRG4BC15UD-LPBF-9

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Manufacturer Part :
IRG4BC15UD-LPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IRG4BC15UD-LPBF Datasheet :
IRG4BC15UD-LPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2001

Mounting Type

Through Hole

Number of Pins

3

Weight

2.084002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 7.8A, 75 Ω, 15V

Turn Off Delay Time

160 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

49W

Peak Reflow Temperature (Cel)

260

Current Rating

14A

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

Factory Lead Time

13 Weeks

Gate Charge

23nC

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Turn On Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 7.8A

Turn Off Time-Nom (toff)

400 ns

Current - Collector Pulsed (Icm)

42A

Td (on/off) @ 25°C

17ns/160ns

Power Dissipation

49W

Switching Energy

240μJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

9.652mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

17 ns

Lead Free

Lead Free

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