Infineon Technologies IRG4BC20SD-SPBF

SKU: IRG4BC20SD-SPBF-9

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Manufacturer Part :
IRG4BC20SD-SPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRG4BC20SD-SPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Current Rating

19A

Factory Lead Time

13 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Published

1997

Time@Peak Reflow Temperature-Max (s)

30

Turn On Time

99 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Power Dissipation

60W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

32ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

19A

Reverse Recovery Time

37 ns

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

62ns/690ns

Switching Energy

320μJ (on), 2.58mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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