Infineon Technologies IRG4BC20SDPBF

SKU: IRG4BC20SDPBF-9

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Manufacturer Part :
IRG4BC20SDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRG4BC20SDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Turn Off Delay Time

1.04 μs

Element Configuration

Single

Factory Lead Time

18 Weeks

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

60W

Current Rating

19A

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Turn Off Time-Nom (toff)

1780 ns

Turn On Delay Time

62 ns

Transistor Application

POWER CONTROL

Rise Time

35ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

19A

Reverse Recovery Time

37 ns

JEDEC-95 Code

TO-220AB

Turn On Time

99 ns

Case Connection

COLLECTOR

Input Type

Standard

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

62ns/690ns

Switching Energy

320μJ (on), 2.58mJ (off)

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

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