Infineon Technologies IRG4BC20SPBF

SKU: IRG4BC20SPBF-9

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Manufacturer Part :
IRG4BC20SPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRG4BC20SPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2000

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Turn Off Delay Time

540 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Packaging

Tube

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Position

SINGLE

Current Rating

19A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

27nC

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

9.7ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

19A

JEDEC-95 Code

TO-220AB

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Turn Off Time-Nom (toff)

1540 ns

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

27ns/540ns

Case Connection

COLLECTOR

Switching Energy

120μJ (on), 2.05mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

27 ns

Lead Free

Lead Free

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