Infineon Technologies IRG4BC20UPBF

SKU: IRG4BC20UPBF-9

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Manufacturer Part :
IRG4BC20UPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRG4BC20UPBF Datasheet :
IRG4BC20UPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Turn Off Delay Time

86 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Factory Lead Time

16 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST

Voltage - Rated DC

600V

Max Power Dissipation

60W

Current Rating

13A

Element Configuration

Single

Packaging

Tube

Input Type

Standard

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

21ns/86ns

Rise Time

13ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

13A

JEDEC-95 Code

TO-220AB

Input Capacitance

530pF

Turn On Time

34 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Turn Off Time-Nom (toff)

330 ns

Gate Charge

27nC

Turn On Delay Time

21 ns

Transistor Application

POWER CONTROL

Switching Energy

100μJ (on), 120μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

180ns

Height

16.51mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

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