Infineon Technologies IRG4BC30KDSTRLP

SKU: IRG4BC30KDSTRLP-9

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Manufacturer Part :
IRG4BC30KDSTRLP
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IRG4BC30KDSTRLP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2000

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.39037mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 16A, 23 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Base Part Number

IRG4BC30KD-SPBF

Factory Lead Time

13 Weeks

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

100W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Turn Off Time-Nom (toff)

370 ns

Input Type

Standard

Power - Max

100W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

28A

Reverse Recovery Time

42 ns

Max Breakdown Voltage

600V

Turn On Time

100 ns

Element Configuration

Single

Case Connection

COLLECTOR

Gate Charge

67nC

Current - Collector Pulsed (Icm)

56A

Td (on/off) @ 25°C

60ns/160ns

Switching Energy

600μJ (on), 580μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

120ns

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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