Infineon Technologies IRG4BC30SPBF

SKU: IRG4BC30SPBF-9

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Manufacturer Part :
IRG4BC30SPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRG4BC30SPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 18A, 23 Ω, 15V

Turn Off Delay Time

540 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Element Configuration

Dual

Published

2000

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

250

Current Rating

34A

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

50nC

Case Connection

COLLECTOR

Turn On Delay Time

22 ns

Transistor Application

POWER CONTROL

Rise Time

18ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

34A

JEDEC-95 Code

TO-220AB

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 18A

Turn Off Time-Nom (toff)

1550 ns

Current - Collector Pulsed (Icm)

68A

Td (on/off) @ 25°C

22ns/540ns

Power Dissipation

100W

Switching Energy

260μJ (on), 3.45mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

590ns

Height

15.24mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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