Infineon Technologies IRG4BC30UDPBF

SKU: IRG4BC30UDPBF-9

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Manufacturer Part :
IRG4BC30UDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRG4BC30UDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2000

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Turn Off Delay Time

91 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

23A

Element Configuration

Single

Power Dissipation

100W

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

50nC

Turn On Delay Time

40 ns

Rise Time

21ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

23A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-220AB

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

300 ns

Current - Collector Pulsed (Icm)

92A

Td (on/off) @ 25°C

40ns/91ns

Input Type

Standard

Switching Energy

380μJ (on), 160μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

16.51mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

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