Infineon Technologies IRG4BC40FPBF

SKU: IRG4BC40FPBF-9

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Manufacturer Part :
IRG4BC40FPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRG4BC40FPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Element Configuration

Dual

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 27A, 10 Ω, 15V

Turn Off Delay Time

240 ns

Packaging

Tube

Published

2000

Operating Temperature

-55°C~150°C TJ

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

FAST SWITCHING

Voltage - Rated DC

600V

Max Power Dissipation

160W

Terminal Position

SINGLE

Current Rating

49A

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

100nC

Current - Collector Pulsed (Icm)

196A

Turn On Delay Time

26 ns

Transistor Application

POWER CONTROL

Rise Time

18ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7V

Max Collector Current

49A

JEDEC-95 Code

TO-220AB

Turn On Time

46 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 27A

Turn Off Time-Nom (toff)

690 ns

Case Connection

COLLECTOR

Power Dissipation

160W

Td (on/off) @ 25°C

26ns/240ns

Switching Energy

370μJ (on), 1.81mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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