Infineon Technologies IRG4IBC30SPBF

SKU: IRG4IBC30SPBF-9

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Manufacturer Part :
IRG4IBC30SPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3 Full Pack
RoHS :
RoHS Compliant
IRG4IBC30SPBF Datasheet :
IRG4IBC30SPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Power Dissipation

45W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 18A, 23 Ω, 15V

Turn Off Delay Time

540 ns

Packaging

Tube

Published

2004

Operating Temperature

-55°C~150°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

45W

Terminal Position

SINGLE

Current Rating

23.5A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

47A

Td (on/off) @ 25°C

22ns/540ns

Transistor Application

POWER CONTROL

Rise Time

19ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

23.5A

JEDEC-95 Code

TO-220AB

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 18A

Turn Off Time-Nom (toff)

1550 ns

Gate Charge

50nC

Input Type

Standard

Case Connection

ISOLATED

Switching Energy

260μJ (on), 3.45mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

590ns

Height

16.12mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Turn On Delay Time

22 ns

Lead Free

Contains Lead, Lead Free

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