Infineon Technologies IRG4IBC30WPBF

SKU: IRG4IBC30WPBF-9

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Manufacturer Part :
IRG4IBC30WPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3 Full Pack
RoHS :
ROHS3 Compliant
IRG4IBC30WPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Turn Off Delay Time

99 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

45W

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

45W

Terminal Position

SINGLE

Current Rating

17A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

51nC

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

16ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

17A

JEDEC-95 Code

TO-220AB

Turn On Time

41 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Turn Off Time-Nom (toff)

300 ns

Current - Collector Pulsed (Icm)

92A

Td (on/off) @ 25°C

25ns/99ns

Case Connection

ISOLATED

Switching Energy

130μJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

100ns

Height

14.224mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Turn On Delay Time

25 ns

Lead Free

Lead Free

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