Infineon Technologies IRG4PH50SPBF

SKU: IRG4PH50SPBF-9

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Manufacturer Part :
IRG4PH50SPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRG4PH50SPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 33A, 5 Ω, 15V

Turn Off Delay Time

845 ns

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Packaging

Bulk

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

200W

Current Rating

57A

Element Configuration

Single

Power Dissipation

200W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

14 Weeks

Max Junction Temperature (Tj)

150°C

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

57A

Continuous Drain Current (ID)

57A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

3.6nF

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 33A

Continuous Collector Current

57A

Turn Off Time-Nom (toff)

2170 ns

Turn On Delay Time

32 ns

Gate Charge

167nC

Current - Collector Pulsed (Icm)

114A

Td (on/off) @ 25°C

32ns/845ns

Switching Energy

1.8mJ (on), 19.6mJ (off)

Height

24.99mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

29ns

Lead Free

Lead Free

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