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| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Obsolete |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
38W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRG4RC10SDPBF |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
31ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-252AA |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
1780 ns |
| Power Dissipation |
38W |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
1080ns |
| Height |
1.2446mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon |
|---|---|
| Base Product Number |
SIGC84 |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Active |
| Series |
TrenchStop™ |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Current - Collector Pulsed (Icm) |
225 A |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Dual |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 27A, 10 Ω, 15V |
| Turn Off Delay Time |
240 ns |
| Packaging |
Tube |
| Published |
2000 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
FAST SWITCHING |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
160W |
| Terminal Position |
SINGLE |
| Current Rating |
49A |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
196A |
| Turn On Delay Time |
26 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
18ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.7V |
| Max Collector Current |
49A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
46 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 27A |
| Turn Off Time-Nom (toff) |
690 ns |
| Case Connection |
COLLECTOR |
| Power Dissipation |
160W |
| Td (on/off) @ 25°C |
26ns/240ns |
| Switching Energy |
370μJ (on), 1.81mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
8.77mm |
| Length |
10.54mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Dual |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 41A, 5 Ω, 15V |
| Turn Off Delay Time |
650 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
70A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Current - Collector Pulsed (Icm) |
140A |
| Td (on/off) @ 25°C |
33ns/650ns |
| Turn On Delay Time |
33 ns |
| Rise Time |
30ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.36V |
| Max Collector Current |
70A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.36V @ 15V, 41A |
| Turn Off Time-Nom (toff) |
1700 ns |
| Gate Charge |
180nC |
| Case Connection |
COLLECTOR |
| Power Dissipation |
200W |
| Switching Energy |
720μJ (on), 8.27mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
600ns |
| Height |
20.2946mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
720V, 28A, 5 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Dual |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Current Rating |
51A |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
200W |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
204A |
| Turn On Delay Time |
29 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
26ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
51A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 28A |
| Turn Off Time-Nom (toff) |
370 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Td (on/off) @ 25°C |
29ns/110ns |
| Switching Energy |
190μJ (on), 1.06mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
220ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
800V, 10A, 23 Ω, 15V |
| Turn Off Delay Time |
220 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
14 Weeks |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
100W |
| Current Rating |
20A |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Packaging |
Tube |
| Input Type |
Standard |
| Gate Charge |
53nC |
| Current - Collector Pulsed (Icm) |
40A |
| Rise Time |
79ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
4.2V |
| Max Collector Current |
20A |
| Reverse Recovery Time |
50 ns |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
121 ns |
| Vce(on) (Max) @ Vge, Ic |
4.2V @ 15V, 10A |
| Turn Off Time-Nom (toff) |
637 ns |
| Turn On Delay Time |
39 ns |
| Transistor Application |
MOTOR CONTROL |
| Td (on/off) @ 25°C |
39ns/220ns |
| Switching Energy |
950μJ (on), 1.15mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
140ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247AD |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Current-Collector (Ic) (Max) |
60A |
| Test Conditions |
600V, 25A, 5Ohm, 15V |
| Current Rating |
60A |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
300W |
| Turn Off Delay Time |
210 ns |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
169nC |
| Turn On Delay Time |
50 ns |
| Power - Max |
300W |
| Rise Time |
25ns |
| Collector Emitter Voltage (VCEO) |
4V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
300 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
4V @ 15V, 60A |
| Power Dissipation |
300W |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
120A |
| Switching Energy |
1.07mJ (on), 1.49mJ (off) |
| Height |
18.7mm |
| Length |
15.6972mm |
| Width |
5.1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 22A, 3.3 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
14 Weeks |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
308W |
| Current Rating |
60A |
| Element Configuration |
Single |
| Power Dissipation |
308W |
| Packaging |
Bulk |
| Input Type |
Standard |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
120A |
| Rise Time |
6ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.55V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
34 ns |
| Vce(on) (Max) @ Vge, Ic |
2.55V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
142 ns |
| IGBT Type |
NPT |
| Turn On Delay Time |
26 ns |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
26ns/110ns |
| Switching Energy |
220μJ (on), 215μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 33A, 3.3 Ω, 15V |
| Turn Off Delay Time |
130 ns |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
390W |
| Current Rating |
75A |
| Element Configuration |
Single |
| Power Dissipation |
390W |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Gate Charge |
205nC |
| Current - Collector Pulsed (Icm) |
150A |
| Rise Time |
10ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.85V |
| Max Collector Current |
75A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
39 ns |
| Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
161 ns |
| IGBT Type |
NPT |
| Turn On Delay Time |
30 ns |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
30ns/130ns |
| Switching Energy |
255μJ (on), 375μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
20ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Input Type |
Standard |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247AD |
| Mfr |
International Rectifier |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Power - Max |
325 W |
| Current - Collector (Ic) (Max) |
90 A |
| Test Condition |
400V, 48A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 48A |
| Gate Charge |
145 nC |
| Current - Collector Pulsed (Icm) |
144 A |
| Td (on/off) @ 25°C |
70ns/140ns |
| Switching Energy |
1.7mJ (on), 1mJ (off) |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Weight |
6.756g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 5 Ω, 15V |
| Current Rating |
64A |
| Factory Lead Time |
4 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
500W |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Single |
| Max Junction Temperature (Tj) |
150°C |
| Continuous Collector Current |
64A |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
20ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
64A |
| Reverse Recovery Time |
112 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| Power Dissipation |
500W |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
165 ns |
| IGBT Type |
NPT |
| Gate Charge |
220nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
15ns/110ns |
| Switching Energy |
2.3mJ (on), 1.1mJ (off) |
| Height |
29mm |
| Length |
20mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
96 ns |
| Current Rating |
54A |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
17 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
16ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| Reverse Recovery Time |
30 ns |
| Turn On Time |
33 ns |
| Continuous Collector Current |
60A |
| Turn Off Time-Nom (toff) |
180 ns |
| Base Part Number |
HGTG12N60 |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
167W |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 10 Ω, 15V |
| Turn Off Delay Time |
118 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
8 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Current Rating |
60A |
| Base Part Number |
STGW30 |
| Pin Count |
3 |
| Packaging |
Tube |
| Power Dissipation |
200W |
| Turn Off Time-Nom (toff) |
189 ns |
| Gate Charge |
102nC |
| Turn On Delay Time |
29.5 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
40 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
42.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
29.5ns/118ns |
| Switching Energy |
305μJ (on), 181μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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