Infineon Technologies IRG4RC10SDTRRP

SKU: IRG4RC10SDTRRP-9

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Manufacturer Part :
IRG4RC10SDTRRP
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRG4RC10SDTRRP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Base Part Number

IRG4RC10SDPBF

Factory Lead Time

17 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

38W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Published

1999

JESD-30 Code

R-PSSO-G2

Turn On Time

106 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Reverse Recovery Time

28 ns

JEDEC-95 Code

TO-252AA

Element Configuration

Single

Power Dissipation

38W

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

1080ns

Radiation Hardening

No

RoHS Status

RoHS Compliant

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