Infineon Technologies IRG7PH35UD1PBF

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Description

Specification

Processor

Manufacturer	Infineon Technologies
Qualification Status	Not Qualified
Surface Mount	NO
Transistor Element Material	SILICON
Current-Collector (Ic) (Max)	50A
Number of Elements	1
Test Conditions	600V, 20A, 10 Ω, 15V
Operating Temperature	-55°C~150°C TJ
Published	2010
Part Status	Obsolete
Packaging	Tube
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Position	SINGLE
Reach Compliance Code	compliant
Base Part Number	IRG7PH35
JESD-30 Code	R-PSFM-T3
Package / Case	TO-247-3
Mounting Type	Through Hole
Turn Off Time-Nom (toff)	400 ns
IGBT Type	Trench
Power - Max	179W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Power Dissipation-Max (Abs)	179W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
Case Connection	COLLECTOR
Configuration	SINGLE WITH BUILT-IN DIODE
Gate Charge	85nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	-/160ns
Switching Energy	620μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	105ns
Input Type	Standard
RoHS Status	RoHS Compliant

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SKU: IHW20N135R5XKSA1-9

Manufacturer	Infineon Technologies
Operating Temperature	-40°C~175°C TJ
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.35kV
Number of Elements	1
ECCN Code	EAR99
Factory Lead Time	16 Weeks
Packaging	Tube
Published	2013
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Test Conditions	600V, 20A, 10 Ω, 15V
Terminal Finish	Tin (Sn)
Collector Emitter Voltage (VCEO)	1.35kV
Max Collector Current	40A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Input Type	Standard
Power - Max	288W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Max Power Dissipation	288W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max)	1350V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 20A
Turn Off Time-Nom (toff)	450 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	-/235ns
Switching Energy	950μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies IRG4BC40FPBF

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SKU: IRG4BC40FPBF-9

Manufacturer	Infineon Technologies
Element Configuration	Dual
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 27A, 10 Ω, 15V
Turn Off Delay Time	240 ns
Packaging	Tube
Published	2000
Operating Temperature	-55°C~150°C TJ
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	FAST SWITCHING
Voltage - Rated DC	600V
Max Power Dissipation	160W
Terminal Position	SINGLE
Current Rating	49A
Mount	Through Hole
Factory Lead Time	16 Weeks
Gate Charge	100nC
Current - Collector Pulsed (Icm)	196A
Turn On Delay Time	26 ns
Transistor Application	POWER CONTROL
Rise Time	18ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7V
Max Collector Current	49A
JEDEC-95 Code	TO-220AB
Turn On Time	46 ns
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 27A
Turn Off Time-Nom (toff)	690 ns
Case Connection	COLLECTOR
Power Dissipation	160W
Td (on/off) @ 25°C	26ns/240ns
Switching Energy	370μJ (on), 1.81mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	8.77mm
Length	10.54mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Input Type	Standard
Lead Free	Lead Free

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Infineon Technologies IRG4PC40SPBF

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SKU: IRG4PC40SPBF-9

Manufacturer	Infineon Technologies
Published	2000
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 31A, 10 Ω, 15V
Turn Off Delay Time	650 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation	160W
Packaging	Tube
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	600V
Max Power Dissipation	160W
Terminal Position	SINGLE
Current Rating	60A
Element Configuration	Dual
Mount	Through Hole
Factory Lead Time	14 Weeks
Current - Collector Pulsed (Icm)	120A
Input Type	Standard
Rise Time	18ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.5V
Max Collector Current	60A
JEDEC-95 Code	TO-247AC
Turn On Time	44 ns
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 31A
Turn Off Time-Nom (toff)	1940 ns
Gate Charge	100nC
Td (on/off) @ 25°C	22ns/650ns
Switching Energy	450μJ (on), 6.5mJ (off)
Case Connection	COLLECTOR
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	570ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	22 ns
Lead Free	Lead Free

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Infineon Technologies IRG4PC40UDPBF

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SKU: IRG4PC40UDPBF-9

Manufacturer	Infineon Technologies
Published	1998
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 20A, 10 Ω, 15V
Turn Off Delay Time	110 ns
Operating Temperature	-55°C~150°C TJ
Input Type	Standard
Factory Lead Time	14 Weeks
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	600V
Max Power Dissipation	160W
Current Rating	40A
Element Configuration	Single
Power Dissipation	160W
Case Connection	COLLECTOR
Packaging	Bulk
Turn On Delay Time	54 ns
Gate Charge	100nC
Current - Collector Pulsed (Icm)	160A
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-247AC
Turn On Time	92 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 20A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	40A
Turn Off Time-Nom (toff)	330 ns
Transistor Application	POWER CONTROL
Rise Time	57ns
Td (on/off) @ 25°C	54ns/110ns
Switching Energy	710μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	120ns
Height	24.6mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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SKU: IRG4PC50FDPBF-9

Manufacturer	Infineon Technologies
Published	2001
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 39A, 5 Ω, 15V
Turn Off Delay Time	240 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation	200W
Packaging	Tray
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	ULTRA FAST SOFT RECOVERY
Voltage - Rated DC	600V
Max Power Dissipation	200W
Current Rating	70A
Element Configuration	Single
Mount	Through Hole
Factory Lead Time	14 Weeks
Turn Off Time-Nom (toff)	660 ns
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	70A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AC
Turn On Time	86 ns
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 39A
Gate Charge	190nC
Current - Collector Pulsed (Icm)	280A
Case Connection	COLLECTOR
Td (on/off) @ 25°C	55ns/240ns
Switching Energy	1.5mJ (on), 2.4mJ (off)
Fall Time-Max (tf)	210ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	55 ns
Lead Free	Lead Free

Infineon Technologies IRG4PH50SPBF Real Image

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Infineon Technologies IRG4PH50SPBF

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SKU: IRG4PH50SPBF-9

Manufacturer	Infineon Technologies
Published	2004
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 33A, 5 Ω, 15V
Turn Off Delay Time	845 ns
Operating Temperature	-55°C~150°C TJ
Input Type	Standard
Packaging	Bulk
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
Current Rating	57A
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Mount	Through Hole
Factory Lead Time	14 Weeks
Max Junction Temperature (Tj)	150°C
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	57A
Continuous Drain Current (ID)	57A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.6nF
Turn On Time	62 ns
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 33A
Continuous Collector Current	57A
Turn Off Time-Nom (toff)	2170 ns
Turn On Delay Time	32 ns
Gate Charge	167nC
Current - Collector Pulsed (Icm)	114A
Td (on/off) @ 25°C	32ns/845ns
Switching Energy	1.8mJ (on), 19.6mJ (off)
Height	24.99mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Rise Time	29ns
Lead Free	Lead Free

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Infineon Technologies IRG4PH50UPBF

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SKU: IRG4PH50UPBF-9

Manufacturer	Infineon Technologies
Case Connection	COLLECTOR
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 24A, 5 Ω, 15V
Turn Off Delay Time	200 ns
Operating Temperature	-55°C~150°C TJ
Published	2000
Part Status	Last Time Buy
Packaging	Tube
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
Current Rating	45A
Element Configuration	Single
Power Dissipation	200W
Mount	Through Hole
Factory Lead Time	14 Weeks
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	35ns/200ns
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.7V
Max Collector Current	45A
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	49 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 24A
Turn Off Time-Nom (toff)	600 ns
Gate Charge	160nC
Turn On Delay Time	35 ns
Input Type	Standard
Switching Energy	530μJ (on), 1.41mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	500ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	POWER CONTROL
Lead Free	Lead Free

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SKU: IRGP4760-EPBF-9

Manufacturer	International Rectifier
Input Type	Standard
Package / Case	TO-247-3
Supplier Device Package	TO-247AD
Mfr	International Rectifier
Package	Bulk
Product Status	Active
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Voltage - Collector Emitter Breakdown (Max)	650 V
Power - Max	325 W
Current - Collector (Ic) (Max)	90 A
Test Condition	400V, 48A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 48A
Gate Charge	145 nC
Current - Collector Pulsed (Icm)	144 A
Td (on/off) @ 25°C	70ns/140ns
Switching Energy	1.7mJ (on), 1mJ (off)

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ON Semiconductor FGL40N120ANDTU

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SKU: FGL40N120ANDTU-9

Manufacturer	ON Semiconductor
Operating Temperature	-55°C~150°C TJ
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	600V, 40A, 5 Ω, 15V
Current Rating	64A
Factory Lead Time	4 Weeks
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Turn Off Delay Time	110 ns
Element Configuration	Single
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	64A
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	64A
Reverse Recovery Time	112 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	45 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
Power Dissipation	500W
Input Type	Standard
Turn Off Time-Nom (toff)	165 ns
IGBT Type	NPT
Gate Charge	220nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	15ns/110ns
Switching Energy	2.3mJ (on), 1.1mJ (off)
Height	29mm
Length	20mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor HGTG27N120BN

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SKU: HGTG27N120BN-9

Manufacturer	ON Semiconductor
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 27A, 3 Ω, 15V
Turn Off Delay Time	240 ns
Current Rating	72A
Factory Lead Time	44 Weeks
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
Turn Off Time-Nom (toff)	360 ns
IGBT Type	NPT
Input Type	Standard
Turn On Delay Time	24 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	72A
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	42 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Continuous Collector Current	72A
Power Dissipation	500W
Case Connection	COLLECTOR
Gate Charge	270nC
Current - Collector Pulsed (Icm)	216A
Td (on/off) @ 25°C	24ns/195ns
Switching Energy	2.2mJ (on), 2.3mJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

ON Semiconductor NGTB40N120FL2WG Real Image

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ON Semiconductor NGTB40N120FL2WG

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SKU: NGTB40N120FL2WG-9

Manufacturer	ON Semiconductor
Published	2012
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Collector-Emitter Breakdown Voltage	1.2kV
Test Conditions	600V, 40A, 10 Ω, 15V
Operating Temperature	-55°C~175°C TJ
Element Configuration	Single
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	535W
Pin Count	3
Mount	Through Hole
Factory Lead Time	13 Weeks
Current - Collector Pulsed (Icm)	200A
Power - Max	535W
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	80A
Reverse Recovery Time	240 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
IGBT Type	Trench Field Stop
Gate Charge	313nC
Td (on/off) @ 25°C	116ns/286ns
Switching Energy	3.4mJ (on), 1.1mJ (off)
Input Type	Standard
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.4mm
Length	16.25mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Polarity/Channel Type	N-CHANNEL
Lead Free	Lead Free

ON Semiconductor NGTB40N120FL3WG Real Image

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ON Semiconductor NGTB40N120FL3WG

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