Infineon Technologies IRG7PH35UDPBF

SKU: IRG7PH35UDPBF-9

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Manufacturer Part :
IRG7PH35UDPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRG7PH35UDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 10 Ω, 15V

Turn Off Delay Time

160 ns

Input Type

Standard

Factory Lead Time

16 Weeks

Published

2010

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

180W

Element Configuration

Single

Power Dissipation

180W

Case Connection

COLLECTOR

Operating Temperature

-55°C~150°C TJ

Turn On Delay Time

30 ns

Gate Charge

85nC

Current - Collector Pulsed (Icm)

60A

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

50A

Reverse Recovery Time

105 ns

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Turn Off Time-Nom (toff)

400 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Td (on/off) @ 25°C

30ns/160ns

Switching Energy

1.06mJ (on), 620μJ (off)

Gate-Emitter Thr Voltage-Max

6V

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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