Infineon Technologies IRG7PH42UD1-EP

SKU: IRG7PH42UD1-EP-9

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Manufacturer Part :
IRG7PH42UD1-EP
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IRG7PH42UD1-EP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN OVER NICKEL

Max Power Dissipation

313W

Peak Reflow Temperature (Cel)

250

Packaging

Tube

Base Part Number

IRG7PH42

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Turn Off Time-Nom (toff)

460 ns

Input Type

Standard

Power - Max

313W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

85A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Element Configuration

Single

Case Connection

COLLECTOR

IGBT Type

Trench

Gate Charge

180nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

-/270ns

Switching Energy

1.21mJ (off)

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

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