Infineon Technologies IRG7PH50U-EP

SKU: IRG7PH50U-EP-9

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Manufacturer Part :
IRG7PH50U-EP
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IRG7PH50U-EP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 50A, 5 Ω, 15V

Rise Time-Max

60ns

Mount

Through Hole

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Max Power Dissipation

556W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Qualification Status

Not Qualified

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Turn On Time

75 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Power - Max

556W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

140A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Case Connection

COLLECTOR

Input Type

Standard

Turn Off Time-Nom (toff)

710 ns

IGBT Type

Trench

Gate Charge

440nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

35ns/430ns

Switching Energy

4.6mJ (on), 3.2mJ (off)

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

65ns

RoHS Status

RoHS Compliant

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