Infineon Technologies IRGB30B60KPBF

SKU: IRGB30B60KPBF-9

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Manufacturer Part :
IRGB30B60KPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRGB30B60KPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Case Connection

COLLECTOR

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

370W

Current Rating

78A

Element Configuration

Single

Power Dissipation

370W

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

120A

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

78A

JEDEC-95 Code

TO-220AB

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Gate Charge

102nC

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Height

16.51mm

Length

10.6426mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

28ns

Lead Free

Lead Free

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