Infineon Technologies IRGB4056DPBF

SKU: IRGB4056DPBF-9

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Manufacturer Part :
IRGB4056DPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRGB4056DPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 12A, 22 Ω, 15V

Input Type

Standard

Factory Lead Time

16 Weeks

Packaging

Tube

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

140W

Element Configuration

Single

Power Dissipation

140W

Case Connection

COLLECTOR

Turn Off Delay Time

94 ns

Turn On Delay Time

40 ns

Gate Charge

25nC

Current - Collector Pulsed (Icm)

48A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.85V

Max Collector Current

24A

Reverse Recovery Time

68 ns

JEDEC-95 Code

TO-220AB

Turn On Time

48 ns

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Turn Off Time-Nom (toff)

143 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Rise Time

17ns

Td (on/off) @ 25°C

31ns/83ns

Switching Energy

75μJ (on), 225μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

9.02mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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