Infineon Technologies IRGB4061DPBF

SKU: IRGB4061DPBF-9

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Manufacturer Part :
IRGB4061DPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRGB4061DPBF Datasheet :
IRGB4061DPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 18A, 22 Ω, 15V

Input Type

Standard

Factory Lead Time

16 Weeks

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

206W

Element Configuration

Single

Power Dissipation

206W

Case Connection

COLLECTOR

Turn Off Delay Time

105 ns

Turn On Delay Time

40 ns

Gate Charge

35nC

Current - Collector Pulsed (Icm)

72A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

36A

Reverse Recovery Time

100 ns

JEDEC-95 Code

TO-220AB

Turn On Time

65 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 18A

Turn Off Time-Nom (toff)

160 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Rise Time

25ns

Td (on/off) @ 25°C

40ns/105ns

Switching Energy

95μJ (on), 350μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

9.02mm

Length

10.66mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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