Infineon Technologies IRGIB15B60KD1P

SKU: IRGIB15B60KD1P-9

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Manufacturer Part :
IRGIB15B60KD1P
Manufacturer :
Infineon Technologies
Package :
TO-220-3 Full Pack
RoHS :
ROHS3 Compliant
IRGIB15B60KD1P Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 15A, 22 Ω, 15V

Case Connection

ISOLATED

Factory Lead Time

16 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

52W

Current Rating

12A

Element Configuration

Single

Power Dissipation

52W

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Gate Charge

56nC

Current - Collector Pulsed (Icm)

38A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

19A

Reverse Recovery Time

67 ns

JEDEC-95 Code

TO-220AB

Turn On Time

55 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 15A

Turn Off Time-Nom (toff)

250 ns

IGBT Type

NPT

Transistor Application

MOTOR CONTROL

Rise Time

35ns

Td (on/off) @ 25°C

30ns/173ns

Switching Energy

127μJ (on), 334μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Height

16.12mm

Length

10.63mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

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