Infineon Technologies IRGIB7B60KDPBF

SKU: IRGIB7B60KDPBF-9

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Manufacturer Part :
IRGIB7B60KDPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3 Full Pack
RoHS :
RoHS Compliant
IRGIB7B60KDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 8A, 50 Ω, 15V

Turn Off Delay Time

140 ns

Operating Temperature

-55°C~175°C TJ

Published

2004

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

39W

Current Rating

12A

Element Configuration

Single

Power Dissipation

39W

Case Connection

ISOLATED

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

23ns/140ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

12A

Reverse Recovery Time

95 ns

JEDEC-95 Code

TO-220AB

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Turn Off Time-Nom (toff)

220 ns

IGBT Type

NPT

Gate Charge

29nC

Transistor Application

MOTOR CONTROL

Turn On Delay Time

23 ns

Switching Energy

160μJ (on), 160μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

56ns

Height

16.12mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Rise Time

22ns

Lead Free

Lead Free

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