Infineon Technologies IRGP20B120U-EP

SKU: IRGP20B120U-EP-9

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Manufacturer Part :
IRGP20B120U-EP
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
IRGP20B120U-EP Datasheet :
IRGP20B120U-EP

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Test Conditions

600V, 20A, 5 Ω, 15V

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

300W

Current Rating

40A

Mount

Through Hole

Factory Lead Time

14 Weeks

Turn Off Time-Nom (toff)

228 ns

IGBT Type

NPT

Rise Time

30ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.85V

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

70 ns

Vce(on) (Max) @ Vge, Ic

4.85V @ 15V, 40A

Input Type

Standard

Power Dissipation

300W

Gate Charge

169nC

Current - Collector Pulsed (Icm)

120A

Switching Energy

850μJ (on), 425μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Contains Lead, Lead Free

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