Infineon Technologies IRGP50B60PD1PBF

SKU: IRGP50B60PD1PBF-9

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Manufacturer Part :
IRGP50B60PD1PBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRGP50B60PD1PBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Turn Off Delay Time

130 ns

Case Connection

COLLECTOR

Factory Lead Time

14 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

390W

Current Rating

75A

Element Configuration

Single

Power Dissipation

390W

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Gate Charge

205nC

Current - Collector Pulsed (Icm)

150A

Rise Time

10ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.85V

Max Collector Current

75A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

39 ns

Vce(on) (Max) @ Vge, Ic

2.85V @ 15V, 50A

Turn Off Time-Nom (toff)

161 ns

IGBT Type

NPT

Turn On Delay Time

30 ns

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

30ns/130ns

Switching Energy

255μJ (on), 375μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

20ns

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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