Infineon Technologies IRGP50B60PDPBF

SKU: IRGP50B60PDPBF-9

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Manufacturer Part :
IRGP50B60PDPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRGP50B60PDPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Bulk

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Turn Off Delay Time

140 ns

Input Type

Standard

Factory Lead Time

14 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

370W

Current Rating

75A

Element Configuration

Single

Power Dissipation

370W

Case Connection

COLLECTOR

Operating Temperature

-55°C~150°C TJ

Turn On Delay Time

33 ns

Gate Charge

240nC

Current - Collector Pulsed (Icm)

150A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Reverse Recovery Time

50 ns

JEDEC-95 Code

TO-247AC

Turn On Time

59 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 50A

Max Junction Temperature (Tj)

150°C

Continuous Collector Current

75A

Turn Off Time-Nom (toff)

190 ns

IGBT Type

NPT

Transistor Application

POWER CONTROL

Rise Time

26ns

Td (on/off) @ 25°C

34ns/130ns

Switching Energy

360μJ (on), 380μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

65ns

Height

24.99mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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